BC856S,125Nexperia USA Inc.
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    BC856S,125123
    • Manufacturer No：
      BC856S,125
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - Bipolar (BJT) - Arrays
    • Datasheet：
    • SKU：
      3941183
    • Description：
      Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP
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    BC856S,125
    • Manufacturer No：
      BC856S,125
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - Bipolar (BJT) - Arrays
    • Datasheet：
      BC856S,125
    • SKU：
      3941183
    • Description：
      Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP

    User Guide

    User Guide

    BC856S,125 Details

    Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP

    BC856S,125 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • JESD-609 Code: e3
    • Emitter Base Voltage (VEBO): 5V
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Published: 2009
    • Max Collector Current: 100mA
    • Frequency: 100MHz
    • Max Power Dissipation: 400mW
    • Transistor Application: SWITCHING
    • Collector Base Voltage (VCBO): 80V
    • Polarity: PNP
    • Collector Emitter Voltage (VCEO): 65V
    • Current - Collector Cutoff (Max): 15nA ICBO
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA 5V
    • Base Part Number: BC856
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Number of Terminations: 6
    • Pin Count: 6
    • Factory Lead Time: 4 Weeks
    • Transistor Element Material: SILICON
    • Current - Collector (Ic) (Max): 100mA
    • Transition Frequency: 100MHz
    • Power Dissipation: 400mW
    • Series: Automotive, AEC-Q101
    • Power - Max: 300mW
    • Operating Temperature: 150°C TJ
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Transistor Type: 2 PNP (Dual)
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500μA, 10mA
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