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- Manufacturer No：BCM857BV,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Arrays
- Datasheet：
Get the PDF file - SKU：3940883
- Description：TRANS 2PNP 45V 0.1A SOT666
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- 10 $0.425 $4.25
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- 10000 $0.41 $4100
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- Manufacturer No：BCM857BV,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Arrays
- Datasheet：BCM857BV,115
- SKU：3940883
- Description：TRANS 2PNP 45V 0.1A SOT666
User Guide
User Guide
BCM857BV,115 Details
TRANS 2PNP 45V 0.1A SOT666
BCM857BV,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- JESD-609 Code: e3
- Emitter Base Voltage (VEBO): 5V
- Number of Terminations: 6
- Pin Count: 6
- Element Configuration: Dual
- Terminal Finish: Tin (Sn)
- Max Collector Current: 100mA
- Terminal Form: FLAT
- hFE Min: 200
- Power Dissipation: 300mW
- Operating Temperature: 150°C TJ
- Collector Emitter Voltage (VCEO): 45V
- Length: 1.7mm
- Transistor Application: AMPLIFIER
- Frequency: 175MHz
- Transition Frequency: 175MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA 5V
- Transistor Type: 2 PNP (Dual) Matched Pair
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Lead Free: Lead Free
- Collector Base Voltage (VCBO): 50V
- Number of Pins: 6
- Factory Lead Time: 4 Weeks
- Published: 2006
- Transistor Element Material: SILICON
- Height: 600μm
- Width: 1.3mm
- Max Power Dissipation: 300mW
- Polarity: PNP
- Collector Emitter Breakdown Voltage: 45V
- Max Breakdown Voltage: 45V
- Collector Emitter Saturation Voltage: 400mV
- Package / Case: SOT-563, SOT-666
- Gain Bandwidth Product: 175MHz
- Current - Collector Cutoff (Max): 15nA ICBO
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Base Part Number: BCM857
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