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- Manufacturer No：BUK9K5R6-30EX
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：
Get the PDF file - SKU：3946197
- Description：MOSFET 2N-CH 30V 40A 56LFPAK
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- 10 $1.676 $16.76
- 100 $1.659 $165.9
- 1000 $1.642 $1642
- 10000 $1.625 $16250
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- Manufacturer No：BUK9K5R6-30EX
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：BUK9K5R6-30EX
- SKU：3946197
- Description：MOSFET 2N-CH 30V 40A 56LFPAK
User Guide
User Guide
BUK9K5R6-30EX Details
MOSFET 2N-CH 30V 40A 56LFPAK
BUK9K5R6-30EX Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Factory Lead Time: 12 Weeks
- Number of Terminations: 6
- Published: 2015
- Drain to Source Voltage (Vdss): 30V
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- JESD-30 Code: R-PDSO-G6
- FET Type: 2 N-Channel (Dual)
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Max Power Dissipation: 64W
- Drain-source On Resistance-Max: 0.0058Ohm
- Avalanche Energy Rating (Eas): 169 mJ
- Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Pin Count: 8
- Number of Pins: 4
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 30V
- Operating Temperature: -55°C~175°C TJ
- Continuous Drain Current (ID): 40A
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Power - Max: 64W
- Package / Case: SOT-1205, 8-LFPAK56
- Pulsed Drain Current-Max (IDM): 305A
- Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
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