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- Manufacturer No：2N7002BKV,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：2N7002BKV,115
- SKU：3942017
- Description：2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET - SOT666
User Guide
User Guide
2N7002BKV,115 Details
2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET - SOT666
2N7002BKV,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Surface Mount: YES
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- Drain to Source Breakdown Voltage: 60V
- Factory Lead Time: 4 Weeks
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Terminal Form: FLAT
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time: 5 ns
- Power - Max: 350mW
- Fall Time (Typ): 7 ns
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Power Dissipation: 525mW
- Drain Current-Max (Abs) (ID): 0.34A
- Rds On (Max) @ Id, Vgs: 1.6 Ω @ 500mA, 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 6
- Peak Reflow Temperature (Cel): 260
- Max Dual Supply Voltage: 60V
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2010
- Gate to Source Voltage (Vgs): 20V
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Turn-Off Delay Time: 12 ns
- Max Power Dissipation: 350mW
- Rise Time: 6 ns
- Resistance: 1.6Ohm
- Continuous Drain Current (ID): 340mA
- Package / Case: SOT-563, SOT-666
- Series: Automotive, AEC-Q101, TrenchMOS?
- Vgs(th) (Max) @ Id: 2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
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