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- Manufacturer No：BUK9K32-100EX
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：BUK9K32-100EX
- SKU：3948015
- Description：MOSFET 2N-CH 100V 26A 56LFPAK
User Guide
User Guide
BUK9K32-100EX Details
MOSFET 2N-CH 100V 26A 56LFPAK
BUK9K32-100EX Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- Pin Count: 8
- Number of Terminations: 4
- Terminal Form: GULL WING
- Drain to Source Breakdown Voltage: 100V
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- Operating Temperature: -55°C~175°C TJ
- Case Connection: DRAIN
- Additional Feature: AVALANCHE RATED
- FET Type: 2 N-Channel (Dual)
- Series: TrenchMOS?
- JESD-30 Code: R-PSSO-G4
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Max Power Dissipation: 64W
- Package / Case: SOT-1205, 8-LFPAK56
- Avalanche Energy Rating (Eas): 74 mJ
- Rds On (Max) @ Id, Vgs: 31m Ω @ 5A, 10V
- Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Factory Lead Time: 12 Weeks
- Published: 2013
- Drain to Source Voltage (Vdss): 100V
- Element Configuration: Dual
- Gate to Source Voltage (Vgs): 15V
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- Continuous Drain Current (ID): 26A
- Reference Standard: AEC-Q101; IEC-60134
- Rise Time: 22ns
- Drain-source On Resistance-Max: 0.033Ohm
- Turn On Delay Time: 12.6 ns
- Pulsed Drain Current-Max (IDM): 106A
- Fall Time (Typ): 23.1 ns
- Turn-Off Delay Time: 39.5 ns
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